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NXP USA Inc. MRF6V2010NR1
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NXP USA Inc. MRF6V2010NR1

NXP USA Inc.

Manufacturer No:

MRF6V2010NR1

Manufacturer:

NXP USA Inc.

Cybertant No:

-

Package:

-

Datasheet:

-

ECAD Model:

-

Description:

Trans RF MOSFET N-CH 110V 3-Pin TO-270 T/R

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In Stock : 100000

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  • Prepare productStep1:Prepare product
  • Vacuum packagingStep2:Vacuum packaging
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NXP USA Inc. MRF6V2010NR1 information

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NXP USA Inc. MRF6V2010NR1 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF6V2010NR1.
ParameterValue
Factory Lead Time 10 Weeks
Package / Case TO-270AA
Surface Mount YES
Transistor Element Material SILICON
Number of Elements 1
Operating Temperature (Max.) 225u00b0C
Voltage Rated 110V
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Frequency 220MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MRF6V2010
JESD-30 Code R-PDFM-F2
Qualification Status Not Qualified
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 30mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 23.9dB
DS Breakdown Voltage-Min 110V
Power - Output 10W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 50V
RoHS Status ROHS3 Compliant

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