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ON Semiconductor MMUN2132LT1G

ON Semiconductor

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MMUN2132LT1G

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ON Semiconductor

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TRANS PREBIAS PNP 246MW SOT23-3

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ON Semiconductor MMUN2132LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMUN2132LT1G.

Parameter	Value
Factory Lead Time	5 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Collector-Emitter Breakdown Voltage	50V
Collector-Emitter Saturation Voltage	250mV
hFEMin	15
Number of Elements	1
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Max Operating Temperature	150u00b0C
Min Operating Temperature	-55u00b0C
Additional Feature	BUILT-IN BIAS RESISTOR RATIO 1
Voltage - Rated DC	-50V
Max Power Dissipation	246mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-100mA
Time@Peak Reflow Temperature-Max (s)	40
Base Part Number	MMUN21**L
Pin Count	3
Max Output Current	100mA
Operating Supply Voltage	50V
Polarity	PNP
Element Configuration	Single
Power Dissipation	246mW
Transistor Application	SWITCHING
Halogen Free	Halogen Free
Transistor Type	PNP - Pre-Biased
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA
Max Breakdown Voltage	50V
Resistor - Base (R1)	4.7 k u03a9
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	4.7 k u03a9
Height	940u03bcm
Length	2.9mm
Width	1.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free