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ON Semiconductor MJE13007G
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ON Semiconductor MJE13007G

ON Semiconductor

Manufacturer No:

MJE13007G

Manufacturer:

ON Semiconductor

Cybertant No:

-

Package:

-

Datasheet:

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ECAD Model:

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Description:

Trans GP BJT NPN 400V 8A 3-Pin(3 Tab) TO-220AB Rail

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In Stock : 498

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FedEx International, 5-7 business days.

The following are some common countries' logistic time. transport
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  • Vacuum packagingStep2:Vacuum packaging
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ON Semiconductor MJE13007G information

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ON Semiconductor MJE13007G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE13007G.
ParameterValue
Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 400V
Collector-Emitter Saturation Voltage 1V
hFEMin 8
Number of Elements 1
Operating Temperature -65u00b0C~150u00b0C TJ
Packaging Tube
Published 2004
Series SWITCHMODEu2122
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC 400V
Max Power Dissipation 80W
Peak Reflow Temperature (Cel) 260
Current Rating 8A
Frequency 14MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Power Dissipation 80W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 14MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 5A 5V
Current - Collector Cutoff (Max) 100u03bcA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3V @ 2A, 8A
Transition Frequency 14MHz
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 9V
Height 15.748mm
Length 10.2616mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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