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Integrated Silicon Solution, Inc. (ISSI) IS43R86400E-6TL

Integrated Silicon Solution, Inc. (ISSI)

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IS43R86400E-6TL

Manufacturer:

Integrated Silicon Solution, Inc. (ISSI)

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DRAM Chip DDR SDRAM 512M-Bit 64Mx8 2.5V/2.6V 66-Pin TSOP-II

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Step1：Prepare product
Step2：Vacuum packaging
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Step4：Individual package
Step5：Packaging box
Step6：Barcode shipping label

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Integrated Silicon Solution, Inc. (ISSI) IS43R86400E-6TL information

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Integrated Silicon Solution, Inc. (ISSI) IS43R86400E-6TL technical specifications, attributes, parameters and parts with similar specifications to Integrated Silicon Solution, Inc. (ISSI) IS43R86400E-6TL.

Parameter	Value
Factory Lead Time	8 Weeks
Mounting Type	Surface Mount
Package / Case	66-TSSOP (0.400, 10.16mm Width)
Surface Mount	YES
Supplier Device Package	66-TSOP II
Number of Terminals	66
Access Time-Max	0.7 ns
Ihs Manufacturer	INTEGRATED SILICON SOLUTION INC
Manufacturer Part Number	IS43R86400E-6TL
Memory Types	Volatile
Mfr	ISSI, Integrated Silicon Solution Inc
Number of Words	67108864 words
Number of Words Code	64000000
Operating Temperature-Max	70 u00b0C
Package	Bulk
Package Body Material	PLASTIC/EPOXY
Package Code	TSOP2
Package Description	TSOP2,
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE, THIN PROFILE
Part Life Cycle Code	Active
Product Status	Active
Reflow Temperature-Max (s)	NOT SPECIFIED
Risk Rank	5.61
Rohs Code	Yes
Supply Voltage-Nom (Vsup)	2.5 V
Operating Temperature	0u00b0C ~ 70u00b0C (TA)
Series	-
Additional Feature	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
Voltage - Supply	2.3V ~ 2.7V
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Number of Functions	1
Terminal Pitch	0.65 mm
Reach Compliance Code	compliant
JESD-30 Code	R-PDSO-G66
Supply Voltage-Max (Vsup)	2.7 V
Temperature Grade	COMMERCIAL
Supply Voltage-Min (Vsup)	2.3 V
Memory Size	512Mbit
Number of Ports	1
Operating Mode	SYNCHRONOUS
Clock Frequency	166 MHz
Access Time	700 ps
Memory Format	DRAM
Memory Interface	SSTL_2
Organization	64MX8
Seated Height-Max	1.2 mm
Memory Width	8
Write Cycle Time - Word, Page	15ns
Memory Density	536870912 bit
Memory IC Type	DDR DRAM
Access Mode	FOUR BANK PAGE BURST
Self Refresh	YES
Memory Organization	64M x 8
Length	22.22 mm
Width	10.16 mm