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Infineon Technologies IRF9952TRPBF
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Infineon Technologies IRF9952TRPBF

Infineon Technologies

Manufacturer No:

IRF9952TRPBF

Manufacturer:

Infineon Technologies

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Description:

MOSFET N/P-CH 30V 8-SOIC

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Infineon Technologies IRF9952TRPBF information

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Infineon Technologies IRF9952TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF9952TRPBF.
ParameterValue
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25u2103 3.5A 2.3A
Number of Elements 2
Turn Off Delay Time 20 ns
Operating Temperature -55u00b0C~150u00b0C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFETu00ae
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 100mOhm
Additional Feature HIGH RELIABILITY
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 3.5A
Base Part Number IRF9952PBF
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m u03a9 @ 2.2A, 10V
Vgs(th) (Max) @ Id 1V @ 250u03bcA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 14ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 3.5A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 16A
Avalanche Energy Rating (Eas) 44 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1 V
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

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