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Infineon Technologies IRF8915TRPBF
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Infineon Technologies IRF8915TRPBF

Infineon Technologies

Manufacturer No:

IRF8915TRPBF

Manufacturer:

Infineon Technologies

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Description:

MOSFET 2N-CH 20V 8.9A 8-SOIC

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Infineon Technologies IRF8915TRPBF information

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Infineon Technologies IRF8915TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF8915TRPBF.
ParameterValue
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Number of Elements 2
Turn Off Delay Time 7.1 ns
Operating Temperature -55u00b0C~150u00b0C TJ
Packaging Tape & Reel (TR)
Published 2008
Series HEXFETu00ae
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 18.3MOhm
Voltage - Rated DC 20V
Max Power Dissipation 2W
Current Rating 8.9A
Base Part Number IRF8915PBF
Element Configuration Dual
Power Dissipation 2W
Turn On Delay Time 6 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 18.3m u03a9 @ 8.9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250u03bcA
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V
Rise Time 12ns
Fall Time (Typ) 3.6 ns
Continuous Drain Current (ID) 8.9A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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