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Infineon Technologies IRF7404TRPBF

Infineon Technologies

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IRF7404TRPBF

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Infineon Technologies

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MOSFET P-CH 20V 6.7A 8-SOIC

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Infineon Technologies IRF7404TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7404TRPBF.

Parameter	Value
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25u2103	6.7A Ta
Drive Voltage (Max Rds On, Min Rds On)	2.7V 4.5V
Number of Elements	1
Power Dissipation (Max)	2.5W Ta
Turn Off Delay Time	100 ns
Operating Temperature	-55u00b0C~150u00b0C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFETu00ae
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	40mOhm
Additional Feature	LOGIC LEVEL COMPATIBLE
Voltage - Rated DC	-20V
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-6.7A
Time@Peak Reflow Temperature-Max (s)	30
Row Spacing	6.3 mm
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	14 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	40m u03a9 @ 3.2A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250u03bcA
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	50nC @ 4.5V
Rise Time	32ns
Drain to Source Voltage (Vdss)	20V
Vgs (Max)	u00b112V
Fall Time (Typ)	65 ns
Continuous Drain Current (ID)	-6.7A
Threshold Voltage	-700mV
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	5.3A
Drain to Source Breakdown Voltage	-20V
Dual Supply Voltage	-20V
Recovery Time	100 ns
Nominal Vgs	-700 mV
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free