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Infineon Technologies IRF7105TRPBF
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Infineon Technologies IRF7105TRPBF

Infineon Technologies

Manufacturer No:

IRF7105TRPBF

Manufacturer:

Infineon Technologies

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Description:

MOSFET N/P-CH 25V 8-SOIC

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Infineon Technologies IRF7105TRPBF information

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Infineon Technologies IRF7105TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7105TRPBF.
ParameterValue
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25u2103 3.5A 2.3A
Number of Elements 2
Turn Off Delay Time 45 ns
Operating Temperature -55u00b0C~150u00b0C TJ
Packaging Tape & Reel (TR)
Published 2003
Series HEXFETu00ae
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 100mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 3.5A
Base Part Number IRF7105PBF
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 7 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m u03a9 @ 1A, 10V
Vgs(th) (Max) @ Id 3V @ 250u03bcA
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 13ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 37 ns
Continuous Drain Current (ID) 3.5A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 14A
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150u00b0C
FET Feature Standard
Nominal Vgs 3 V
Height 1.75mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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