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Infineon Technologies IR2110SPBF
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Infineon Technologies IR2110SPBF

Infineon Technologies

Manufacturer No:

IR2110SPBF

Manufacturer:

Infineon Technologies

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Package:

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ECAD Model:

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Description:

IC GATE DRVR HALF-BRIDGE 16SOIC

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Infineon Technologies IR2110SPBF information

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Infineon Technologies IR2110SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2110SPBF.
ParameterValue
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 16-SOIC (0.295, 7.50mm Width)
Number of Pins 16
Driver Configuration Half-Bridge
Logic voltage-VIL, VIH 6V 9.5V
Turn Off Delay Time 94 ns
Operating Temperature -40u00b0C~150u00b0C TJ
Packaging Tube
Published 1996
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 16
Termination SMD/SMT
ECCN Code EAR99
Type Integrated Circuit (IC)
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 1.25W
Voltage - Supply 3.3V~20V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 15V
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IR2110SPBF
Number of Outputs 2
Output Voltage 520V
Max Output Current 2.5mA
Operating Supply Voltage 15V
Nominal Supply Current 180u03bcA
Power Dissipation 1.25W
Output Current 2.5A
Max Supply Current 340u03bcA
Propagation Delay 120 ns
Input Type Non-Inverting
Turn On Delay Time 120 ns
Max Output Voltage 20V
Reference Voltage 500V
Rise Time 25ns
Fall Time (Typ) 17 ns
Min Output Voltage 10V
Rise / Fall Time (Typ) 25ns 17ns
Channel Type Independent
Turn On Time 0.15 u03bcs
Output Peak Current Limit-Nom 2.5A
Gate Type IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink) 2A 2A
Max Junction Temperature (Tj) 150u00b0C
High Side Driver YES
Ambient Temperature Range High 125u00b0C
Height 2.65mm
Length 10.4902mm
Width 7.5946mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

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