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ON Semiconductor FJV3105RMTF

ON Semiconductor

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FJV3105RMTF

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ON Semiconductor

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Transistors Switching - Resistor Biased 50V/100mA/4.7K 10K

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ON Semiconductor FJV3105RMTF technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor FJV3105RMTF.

Parameter	Value
Factory Lead Time	13 Weeks
Lifecycle Status	LIFETIME (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	30mg
Collector-Emitter Breakdown Voltage	50V
hFEMin	30
Number of Elements	1
Packaging	Tape & Reel (TR)
Published	2016
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Operating Temperature	150u00b0C
Min Operating Temperature	-55u00b0C
HTS Code	8541.21.00.95
Voltage - Rated DC	50V
Max Power Dissipation	200mW
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	100mA
Base Part Number	FJV3105
Polarity	NPN
Element Configuration	Single
Power Dissipation	200mW
Transistor Application	SWITCHING
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 500u03bcA, 10mA
Transition Frequency	250MHz
Max Breakdown Voltage	50V
Frequency - Transition	250MHz
Collector Base Voltage (VCBO)	50V
Emitter Base Voltage (VEBO)	10V
Resistor - Base (R1)	4.7 k u03a9
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	10 k u03a9
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free