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ON Semiconductor FDG6301N-F085
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ON Semiconductor FDG6301N-F085

ON Semiconductor

Manufacturer No:

FDG6301N-F085

Manufacturer:

ON Semiconductor

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Package:

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Description:

MOSFET 2N-CH 25V 0.22A SC70-6

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ON Semiconductor FDG6301N-F085 information

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ON Semiconductor FDG6301N-F085 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor FDG6301N-F085.
ParameterValue
Factory Lead Time 42 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 28mg
Transistor Element Material SILICON
Number of Elements 2
Turn Off Delay Time 4 ns
Operating Temperature -55u00b0C~150u00b0C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Additional Feature LOGIC LEVEL COMPATIBLE
Max Power Dissipation 300mW
Terminal Form GULL WING
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 5 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4 u03a9 @ 220mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250u03bcA
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V
Rise Time 4.5ns
Drain to Source Voltage (Vdss) 25V
Fall Time (Typ) 3.2 ns
Continuous Drain Current (ID) 220mA
Threshold Voltage 850mV
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 4Ohm
Drain to Source Breakdown Voltage 25V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150u00b0C
FET Feature Logic Level Gate
Height 1.1mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

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