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Diodes Incorporated DMB53D0UDW-7
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Diodes Incorporated DMB53D0UDW-7

Diodes Incorporated

Manufacturer No:

DMB53D0UDW-7

Manufacturer:

Diodes Incorporated

Cybertant No:

-

Package:

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Datasheet:

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ECAD Model:

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Description:

MOSFET N-CHANNEL NPN ENHANCEMENT MODE

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In Stock : 100

Minimum: 1 Multiples: 1

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FedEx International, 5-7 business days.

The following are some common countries' logistic time. transport
  • Prepare productStep1:Prepare product
  • Vacuum packagingStep2:Vacuum packaging
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Diodes Incorporated DMB53D0UDW-7 information

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Diodes Incorporated DMB53D0UDW-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMB53D0UDW-7.
ParameterValue
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 6.010099mg
Number of Elements 1
Voltage Rated 45V NPN 50V N-Channel
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150u00b0C
Min Operating Temperature -55u00b0C
Applications General Purpose
Additional Feature HIGH RELIABILITY
Current Rating (Amps) 100mA PNP 160mA N-Channel
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 160mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DMB53D0U
Pin Count 6
Qualification Status Not Qualified
Number of Channels 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Drain to Source Voltage (Vdss) 50V
Transistor Type NPN, N-Channel
Continuous Drain Current (ID) 160mA
Gate to Source Voltage (Vgs) 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
DC Current Gain-Min (hFE) 200
Drain to Source Resistance 5Ohm
VCEsat-Max 0.3 V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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