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Diodes Incorporated BSS138DW-7-F
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Diodes Incorporated BSS138DW-7-F

Diodes Incorporated

Manufacturer No:

BSS138DW-7-F

Manufacturer:

Diodes Incorporated

Cybertant No:

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Package:

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ECAD Model:

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Description:

DIODES INC. - BSS138DW-7-F - Dual MOSFET, N Channel, 50 V, 200 mA, 3.5 ohm, SOT-363, Surface Mount

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Diodes Incorporated BSS138DW-7-F information

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Diodes Incorporated BSS138DW-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS138DW-7-F.
ParameterValue
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Supplier Device Package SOT-363
Weight 6.010099mg
Current - Continuous Drain (Id) @ 25u2103 200mA
Number of Elements 2
Turn Off Delay Time 20 ns
Operating Temperature -55u00b0C~150u00b0C TJ
Packaging Tape & Reel (TR)
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Resistance 3.5Ohm
Max Operating Temperature 150u00b0C
Min Operating Temperature -55u00b0C
Voltage - Rated DC 50V
Max Power Dissipation 200mW
Current Rating 200mA
Number of Channels 2
Element Configuration Dual
Power Dissipation 200mW
Turn On Delay Time 20 ns
Power - Max 200mW
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250u03bcA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Drain to Source Voltage (Vdss) 50V
Continuous Drain Current (ID) 200mA
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Input Capacitance 50pF
Max Junction Temperature (Tj) 150u00b0C
FET Feature Logic Level Gate
Drain to Source Resistance 3.5Ohm
Rds On Max 3.5 u03a9
Nominal Vgs 1.2 V
Min Breakdown Voltage 50V
Height 1.1mm
Length 2.2mm
Width 1.35mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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