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ON Semiconductor BAS40-04LT1G
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ON Semiconductor BAS40-04LT1G

ON Semiconductor

Manufacturer No:

BAS40-04LT1G

Manufacturer:

ON Semiconductor

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Description:

DIODE ARRAY SCHOTTKY 40V SOT23-3

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  • Vacuum packagingStep2:Vacuum packaging
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ON Semiconductor BAS40-04LT1G information

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ON Semiconductor BAS40-04LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BAS40-04LT1G.
ParameterValue
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Diode Element Material SILICON
Breakdown Voltage / V 40V
Number of Elements 2
Packaging Cut Tape (CT)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150u00b0C
Min Operating Temperature -55u00b0C
Additional Feature FAST SWITCHING
HTS Code 8541.10.00.70
Capacitance 5pF
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 5A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BAS40-04L
Pin Count 3
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Schottky
Current - Reverse Leakage @ Vr 1u03bcA @ 25V
Power Dissipation 225mW
Voltage - Forward (Vf) (Max) @ If 1V @ 40mA
Forward Current 120mA
Max Reverse Leakage Current 1u03bcA
Operating Temperature - Junction -55u00b0C~150u00b0C
Max Surge Current 600mA
Output Current-Max 0.12A
Current - Average Rectified (Io) 120mA DC
Forward Voltage 1V
Max Reverse Voltage (DC) 40V
Average Rectified Current 120mA
Peak Reverse Current 1u03bcA
Max Repetitive Reverse Voltage (Vrrm) 40V
Peak Non-Repetitive Surge Current 600A
Diode Configuration 1 Pair Series Connection
Max Forward Surge Current (Ifsm) 200mA
Height 1.016mm
Length 3.0226mm
Width 1.397mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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