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Microchip Technology ARF1501
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Microchip Technology ARF1501

Microchip Technology

Manufacturer No:

ARF1501

Manufacturer:

Microchip Technology

Cybertant No:

-

Package:

-

Datasheet:

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ECAD Model:

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Description:

RF MOSFET Transistors FG, MOSFET, 1000V, ARF, T1View in Development Tools Selector

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Microchip Technology ARF1501 information

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Microchip Technology ARF1501 technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology ARF1501.
ParameterValue
Lifecycle Status Production (Last Updated: 2 months ago)
Package / Case T-1
Surface Mount YES
Supplier Device Package T-1
Number of Terminals 6
Transistor Element Material SILICON
Base Product Number ARF1501
Channel Mode Enhancement
Continuous Drain Current Id 30
Drain Current-Max (ID) 30 A
Factory Pack QuantityFactory Pack Quantity 1
Fall Time 13 ns
Forward Transconductance - Min 5.5 mS
Id - Continuous Drain Current 30 A
Ihs Manufacturer MICROSEMI CORP
Manufacturer Part Number ARF1501
Maximum Operating Temperature + 175 C
Mfr Microchip Technology
Minimum Operating Temperature - 55 C
Mounting Styles Flange Mount
Number of Elements 1
Operating Temperature-Max 175 u00b0C
Package Tube
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Description CERAMIC PACKAGE-6
Package Shape SQUARE
Package Style FLATPACK
Part Life Cycle Code Active
Pd - Power Dissipation 1.5 kW
Product Status Active
Rds On - Drain-Source Resistance -
Reflow Temperature-Max (s) NOT SPECIFIED
Risk Rank 1.8
RoHS Details
Rohs Code No
Transistor Polarity N-Channel
Unit Weight 0.669777 oz
Vds - Drain-Source Breakdown Voltage 1 kV
Vgs - Gate-Source Voltage 30 V
Vgs th - Gate-Source Threshold Voltage 5 V
Voltage Rated 1000 V
Voltage, Rating 1 kV
Packaging Bulk
Series -
JESD-609 Code e0
Pbfree Code No
ECCN Code EAR99
Type RF Power MOSFET
Terminal Finish TIN LEAD
Max Operating Temperature 175 u00b0C
Min Operating Temperature -55 u00b0C
Additional Feature HIGH RELIABILITY
Current Rating (Amps) 30A
Max Power Dissipation 1.5 kW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Current Rating 30 A
Frequency 27.12MHz
Pin Count 6
JESD-30 Code S-CDFP-F6
Qualification Status Not Qualified
Operating Frequency 40 MHz
Configuration N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5
Case Connection ISOLATED
Output Power 750 W
Transistor Application AMPLIFIER
Rise Time 5 ns
Drain to Source Voltage (Vdss) 1 kV
Polarity/Channel Type N-CHANNEL
Operating Temperature Range - 55 C to + 175 C
Continuous Drain Current (ID) 30 A
Gate to Source Voltage (Vgs) 30 V
Gain 17 dB
Drain Current-Max (Abs) (ID) 30 A
DS Breakdown Voltage-Min 1000 V
Channel Type N Channel
Power - Output 750W
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 1500 W
Noise Figure -
Voltage - Test 250 V
Highest Frequency Band VERY HIGH FREQUENCY BAND
Test Voltage 250 V
Radiation Hardening No
Lead Free Lead Free

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